2SK1697_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

2SK1697
Main Characteristics
Power vs. Temperature Derating
1.5
1.0
0.5
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0 _{10 V 6 V}
Pulse Test
4V
0.8
3.5 V
0.6
3V
0.4
2.5 V
0.2
V_GS = 2 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.5 A
0.6
0.4
0.2 A
0.2
I_D = 0.1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 May 11, 2006 page 3 of 6
Maximum Safe Operation Area
10
3
1
0.3
0.1
10 _µs
DC _{OPpeWra=tio1n0(mTs1(m1sShot)}
Operation in this area
0.03 _{is limited by RDS (on)}
C _{= 25°C)}
0.01 ^{Ta = 25°C}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
1.0
V_DS = 10 V
Pulse Test
0.8
0.6
0.4
0.2
25°C
T_C = 75°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
V_GS = 4 V
1
10 V
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)