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2SK1697_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET
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2SK1697
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
—
—
1.0
—
—
0.25
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.3
1.8
0.38
33
17
5
3
8
18
14
1
45
Max
—
—
±10
50
2.0
1.7
2.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.3 A, VGS = 10 V *1
ID = 0.3 A, VGS = 4 V *1
ID = 0.3 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 0.3 A, VGS = 10 V,
RL = 100 Ω
IF = 0.5 A, VGS = 0
IF = 0.5 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 May 11, 2006 page 2 of 6
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