2SK1521-E1-E_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – 450V - 50A - MOS FET High Speed Power Switching

2SK1521-E1-E
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1 ^{shot pulse}
0.01
10 μ
100 μ
θ_{ch – c(t) =} γ _{s (t) •} θ _{ch – c}
θ_{ch – c = 0.5°C/W, Tc = 25°C}
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= 30 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS1194EJ0300 Rev.3.00
Mar 26, 2014
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