2SK1521-E1-E_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – 450V - 50A - MOS FET High Speed Power Switching

2SK1521-E1-E
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
100
Crss
V_GS = 0
f = 1 MHz
Ta = 25°C
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
100
V_GS = 0
Ta = 25°C
80 _{Pulse Test}
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Preliminary
Dynamic Input Characteristics (Typical)
500
20
400
V_DD = 100 V
16
250 V
400 V
300
V_GS
12
V_DS
200
8
100
0
0
V_DD = 400 V
250 V
100 V
80 160 240
4
I_D = 50 A
Ta = 25°C
0
320 400
Gate Charge Qg (nC)
R07DS1194EJ0300 Rev.3.00
Mar 26, 2014
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