2SJ687_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING P-CHANNEL POWER MOS FET

2SJ687
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tch - Channel Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
40
35
30
25
20
15
10
5
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150
TC - Case Temperature - °C
-100
ID(pulse)
-10
-1
ID(DC)
RDS(on) Limited
(VGS = −4.5 V)
Power _{Dissipation Limited}
PW = 1 ms
10 ms
-0.1
TC = 25°C
Single Pulse
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/Wi
10
Rth(ch-C) = 3.47°C/Wi
1
0.1
0.01
100 μ
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D18719EJ2V0DS
3