2SJ484 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET High Speed Power Switching

2SJ484
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
–10 V
–3
–2
–5 V
V_GS = 0, 5 V
–1
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= –10 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.3.00 Sep 07, 2005 page 5 of 6