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2SJ484 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET High Speed Power Switching | |||
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2SJ484
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0868-0300
(Previous: ADE-208-501A)
Rev.3.00
Sep 07, 2005
Features
⢠Low on-resistance
RDS (on) = 0.18 ⦠typ. (at VGS = â10 V, ID = â1 A)
⢠Low drive current
⢠High speed switching
⢠4 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R )
D
321
G
4
1. Gate
2. Drain
3. Source
4. Drain
Note: Marking is âWYâ.
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.3.00 Sep 07, 2005 page 1 of 6
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