2SD1137 Datasheet, PDF (5/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

Typical Output Characteristecs
1.0
10
T_C = 25°C
8
0.8
6
0.6
4
0.4
2 mA
0.2
I_B = 0
0
2
4
6
8
10
Collector to emitter voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
10
I_C = 10 I_B
3
T_C = 75°C
1.0
25°C
0.3
–25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)
2SD1137
1,000
DC Current Transfer Ratio
vs. Collector Current
V_CE = 5 V
300
T_C = 75°C
100
25°C
–25°C
30
10
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)
Base to Emitter Saturation Voltage
vs. Collector Current
1.5
I_C = 10 I_B
1.0
T_C = –25°C
25°C
0.5
75°C
0
0.01 0.03 0.1 0.3 1.0 3 10
Collector current I_C (A)