|
2SD1137 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
|
◁ |
2SD1137
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 100 â
voltage
Emitter to base breakdown
V(BR)EBO
4
â
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
I CEO
â
â
I EBO
â
â
hFE
50
â
25
â
Collector to emitter saturation VCE (sat) â
â
voltage
Note: 1. Pulse test.
Max Unit
â
V
â
V
100 µA
50
µA
250
350
1.0 V
Test conditions
IC = 10 mA, RBE = â
IE = 1 mA, IC = 0
VCE = 80 V, RBE = â
VEB = 3.5 V, IC = 0
VCE = 4 V
IC = 0.5 A*1
IC = 50 mA
IC = 1 A, IB = 0.1 A
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
10
(10 V, 4 A)
3
1.0
DC Operation
TC = 25°C
(40 V, 1 A)
0.3
0.1
(100 V, 50 mA)
0.03
0.01
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
|
▷ |