2SC4332_15 Datasheet, PDF (5/7 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
18
15
12
9
6
3
0
0 25 50 75 100 125 150 175
Case Temperature TC (°C)
FORWARD BIAS SAFE OPERATING AREA
100
TC = 25°C
Single pulse
IC (pluse)
10
1
IC (DC)
PW
Power
DC
Dissipation
PW
=
Limited
=1
10 _ms
S/B
ms
Limited
0.1
1
10
100
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
2SC4332,4332-Z
DERATING CURVE OF
SAFE OPERATING AREA
Case Temperature TC (°C)
TRANSIENT THERMAL RESISTANCE vs.
PULSE WIDTH
1000
Rth(j-a) = 125°C/W
100
10
Rth(j-c) = 8.33°C/W
1
TC = 25°C
Single pulse
0.1
1m 10m 100m 1 10 100 1000 10000
Pulse Width PW (s)
DC CURRENT GAIN vs. COLLECTOR CURRENT
Collector to Emitter Voltage VCE (V)
Data Sheet D16430EJ3V0DS
Collector Current IC (A)
3