2SC4332_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

2SC4332,4332-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to Emitter Voltage
VCEO(SUS) IC = 3.0 A, IB = 0.3 A, L = 1 mH
Collector to Emitter Voltage
VCEX(SUS)
IC = 3.0 A, IB1 = −IB2 = 0.3 A,
VBE(OFF) = −1.5 V, L = 180 μH, clamped
Collector Cut-off Current
ICBO
VCE = 60 V, IE = 0
Collector Cut-off Current
ICER
VCE = 60 V, RBE = 51 Ω, TA = 125°C
Collector Cut-off Current
ICEX1
VCE = 60 V, VBE(OFF) = −1.5 V
Collector Cut-off Current
ICEX2
VCE = 60 V, VBE(OFF) = −1.5 V,
TA = 125°C
Emitter Cut-off Current
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Base Saturation Voltage
IEBO
h ^Note
FE1
h Note
FE2
h Note
FE3
V Note
CE(sat)1
V Note
CE(sat)2
V Note
BE(sat)1
V Note
BE(sat)2
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
Collector Capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
Gain Bandwidth Product
fT
VCE = 10 V, IE = −0.5 A
Turn-on Time
Storage Time
Fall Time
ton
IC = 3.0 A, RL = 16.7 Ω,
tstg
IB1 = −IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
tf
Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%
MIN.
60
60
100
100
60
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
TYP.
MAX.
10
1.0
10
1.0
10
400
0.3
0.5
1.2
1.5
130
150
0.3
1.5
0.3
Unit
V
V
μA
mA
μA
mA
μA
V
V
V
V
pF
MHz
μs
μs
μs
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16430EJ3V0DS