2SC4227_15 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD

2SC4227
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Free Air
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
f = 1 MHz
2
150
1
100
0.5
50
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
50
20
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
160 ^µA
140 ^µA
15
120 ^µA
100 ^µA
10
80 ^µA
60 µ^A
5
40 µA
IB = 20 µA
0
0.5
1
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 3 V
f = 1 GHz
8
6
4
2
10
0.5 1
5 10
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
0
0.5 1
5 10
50
Collector Current IC (mA)
Data Sheet PU10451EJ01V0DS
3