2SC4227_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD

ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
h Note 1
FE
VCE = 3 V, IC = 7 mA
fT
VCE = 3 V, IC = 7 mA
S21e² VCE = 3 V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
C Note 2
re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
R33
R33
40 to 90
R34
R34
70 to 150
R35
R35
110 to 240
2SC4227
MIN. TYP. MAX. Unit
−
−
0.8
µA
−
−
0.8
µA
40
−
240
−
4.5
7.0
–
GHz
10
12
−
dB
−
1.4
2.7
dB
−
0.45
0.9
pF
2
Data Sheet PU10451EJ01V0DS