R8C32G_15 Datasheet, PDF (49/57 Pages) Renesas Technology Corp – RENESAS MCU

R8C/32G Group, R8C/32H Group
5. Electrical Characteristics
Table 5.23 Electrical Characteristics (4) [2.7 V ≤ Vcc < 4.2 V]
Symbol
Parameter
Condition
VOH
VOL
VT+-VT-
IIH
IIL
RPULLUP
RfXIN
VRAM
Output “H” voltage
Output “L” voltage
Hysteresis
Input “H” current
Input “L” current
Pull-up resistance
Feedback resistance
RAM hold voltage
Other than XOUT
XOUT
Other than XOUT
XOUT
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
TRAIO, TRBO,
TRCIOA, TRCIOB,
TRCIOC, TRCIOD,
TRDIOA0, TRDIOB0,
TRDIOC0, TRDIOD0,
TRDIOA1, TRDIOB1,
TRDIOC1, TRDIOD1,
TRCTRG, TRCCLK,
ADTRG, TRDCLK,
RXD0, RXD2, CLK0,
CLK2, SSI, SCL2,
SDA, SSO
RESET
XIN
IOH = −1 mA
IOH = −200 µA
IOL = 1 mA
IOL = 200 µA
VCC = 3.0 V
VCC = 3.0 V
VI = 3 V, VCC = 3.0 V
VI = 0 V, VCC = 3.0 V
VI = 0 V, VCC = 3.0 V
During stop mode
Standard
Unit
Min.
Typ.
Max.
VCC − 0.5
−
VCC
V
1.0
−
VCC
V
−
−
0.5
V
−
−
0.5
V
0.1
0.4
−
V
0.1
0.5
−
V
−
−
1.0
µA
−
−
−1.0
µA
42
84
168
kΩ
−
0.3
−
MΩ
2.0
−
−
V
Note:
1. 2.7 V ≤ VCC < 4.2 V and Topr = −40 to 85°C (J version) / −40 to 125°C (K version), f(XIN) = 20 MHz, unless otherwise
specified.
R01DS0026EJ0100 Rev.1.00
Nov 16, 2011
Page 49 of 54