RJK0215DPA Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

RJK0215DPA
Main Characteristics
• MOS1
Power vs. Temperature Derating
16
12
8
4
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V
16
3.3 V
Pulse Test
3.2 V
12
8
3.0 V
4
V_GS = 2.8 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
I_D = 10 A
50
5A
2A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
R07DS0207EJ0110 Rev.1.10
Sep 05, 2011
Preliminary
Maximum Safe Operation Area
1000
100
10
10 _ms
1
100
ms
10
μ_s
μ_s
1
Operation in ^DC
this area is
limited by R_DS(on)
Operation
Tc = 25 °C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 5 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
V_GS = 4.5 V
10
10 V
3
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
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