RJK0206DPA_13 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK0206DPA
Static Drain to Source On State Resistance
vs. Temperature
5
Pulse Test
4
3
V_GS = 4.5 V
2
I_D = 5 A, 10 A, 20 A
1
10 V
5 A, 10 A, 20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
20
I_D = 70 A
40
16
30
V_DS
20
V_DD = 20 V
10 V
V_GS 12
8
10
4
V_DD = 20 V
10 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
150
I_AP = 31 A
V_DD = 15 V
120
duty < 0.1%
Rg ≥ 50 Ω
90
60
30
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
100000
Typical Capacitance vs.
Drain to Source Voltage
30000
10000
Ciss
3000
1000
Coss
300 _{VGS = 0}
Crss
f = 1 MHz
100
0
5
10 15 20 25
Drain to Source Voltage V_DS (V)
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
5V
80
Pulse Test
60
40
20
V_GS = 0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
R07DS0941EJ0400 Rev.4.00
Mar 21, 2013
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