RJK0206DPA_13 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK0206DPA
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
25
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.2
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
1.5
1.9
140
6790
1600
680
1.5
44.5
22.9
12.7
23
8.7
89
30
0.39
50
Max
—
± 0.5
1
2.5
1.8
2.5
—
9500
—
—
3.0
—
—
—
—
—
—
—
—
—
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 25 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 35A, V_GS = 10 V ^Note4
I_D = 35A, V_GS = 4.5 V ^Note4
I_D = 35 A, V_DS = 5 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 70 A
V_GS = 10 V, I_D = 35 A
V_DD  10 V
R_L = 0.29
Rg = 4.7 
I_F = 2 A, V_GS = 0 ^Note4
I_F =70 A, V_GS = 0
di_F/ dt = 100 A/ s
R07DS0941EJ0400 Rev.4.00
Mar 21, 2013
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