RJH60F6DPK_11 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F6DPK
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
V_CE
600
16
V_GE I_C = 25 A
Ta = 25°C
V_CC = 600 V ¹²
300 V
400
8
200
0
0
4
V_CC = 600 V
300 V
0
40
80
120
160
Gate Charge Qg (nc)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
10
V_GE = 0 V
f = 1 MHz
Cres
Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
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