RJH60F6DPK_11 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F6DPK
Main Characteristics
Maximum Safe Operation Area
1000
100
10 _μs
10
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
180
160
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
140
120
100
Tc = 75°C
80
25°C
60
–25°C
40
20
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.0
V_GE = 15 V
Pulse Test
1.8
I_C = 85 A
1.6
45 A
1.4
30 A
1.2
15 A
1.0
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0236EJ0200 Rev.2.00
Nov 30, 2010
Preliminary
Typical Output Characteristics
180
Ta = 25°C
160 Pulse Test
140
10 V
120
11 V
15 V
100
80
60
40
20
0
0
1
2
9.6 V
9.4 V
9.8 V
9.2 V
9V
8.8 V
8.6 V
8.4 V
8.2 V
V_GE = 8 V
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25°C
Pulse Test
2.6
2.2
I_C = 30 A 45 A 85 A
1.8
1.4
1.0
6
8 10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
7
I_C = 10 mA
6
5
1 mA
V_CE = 10 V
Pulse Test
4
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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