RJH60F3DPQ-A0 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 600 V - 20 A - IGBT High Speed Power Switching

RJH60F3DPQ-A0
Forward Current vs. Forward Voltage (Typical)
100
80
60
40
20
V_GE = 0 V
Ta = 25°C
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
V_CE
600
16
V_GE
I_C = 20 A
Ta = 25°C
V_CC = 600 V ¹²
300 V
400
8
200
0
0
4
V_CC = 600 V
300 V
0
12 24 32 48 60
Gate Charge Qg (nc)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
Cres
V_GE = 0 V
f = 1 MHz Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
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