RJH60F3DPQ-A0 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 600 V - 20 A - IGBT High Speed Power Switching

RJH60F3DPQ-A0
Main Characteristics
Maximum Safe Operation Area
1000
100
100 _μs ^{PW =} 10 _μs
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
80
PVu_Cl_Ese=T1e0stV
TPau=lse25T°_eCst
60
40
Tc = 75°C
25°C
20
–25°C
0
2
4
6
8
10 12
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
2.2
V_GE = 15 V
Pulse Test
2.0
I_C = 40 A
1.8
1.6
20 A
15 A
1.4
1.2
−25 0 25 50 75 100 125 150
Junction Temparature Tj (°C)
R07DS0391EJ0200 Rev.2.00
Jul 22, 2011
Preliminary
Typical Output Characteristics
80
Ta = 25°C
Pulse Test
60
12 V
15 V
40
10.5 V
11 V
10 V
9.5 V
9V
20
V_GE = 8.5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.4
Ta = 25°C
3.0
Pulse Test
2.6
2.2
I_C = 40 A
20 A
1.8
15 A
1.4
1.0
8
10 12 14 16 18 20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
8
I_C = 10 mA
6
1 mA
4
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Junction Temparature Tj (°C)
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