RJH60F3DPK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH60F3DPK
Forward Current vs. Forward Voltage (Typical)
100
V_GE = 0 V
Ta = 25°C
80 Pulse Test
60
40
20
0
0
1
2
3
4
5
C-E Diode Forward Voltage V_CEF (V)
Dynamic Input Characteristics (Typical)
800
V_CE
600
16
V_GE
I_C = 20 A
Ta = 25°C
V_CC = 600 V ¹²
300 V
400
8
200
0
0
4
V_CC = 600 V
300 V
0
12 24 32 48 60
Gate Charge Qg (nc)
Switching Characteristics (Typical) (2)
1000
I_C = 20 A, V_GE = 15 V
R_L = 15 Ω, Ta = 25°C
Resistive Load
tf
100
td(off)
tr td(on)
10
1
10
100
Gate Resistance Rg (Ω)
Preliminary
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
10
Cres
V_GE = 0 V
f = 1 MHz Ta = 25°C
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
Switching Characteristics (Typical) (1)
1000
V_CC = 300 V, V_GE = 15 V
Rg = 5 Ω, Ta = 25°C, Resistive Load
tf
100
td(off)
10
td(on)
tr
1
1
10
100
Collector Current I_C (A)
Switching Characteristics (Typical) (3)
1000
I_C = 20 A, V_GE = 15 V
R_L = 15 Ω, Rg = 5 Ω
Resistive Load
tf
100
td(off)
tr
td(on)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0199EJ0200 Rev.2.00
Dec 01, 2010
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