RJH60F3DPK_15 Datasheet, PDF(2/8 Page) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

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RJH60F3DPK_15 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

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RJH60F3DPK

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

Gate to emitter leak current

IGES

Gate to emitter cutoff voltage

VGE(off)

Collector to emitter saturation voltage VCE(sat)

Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Switching time

td(on)

td(off)

C-E diode forward voltage

VECF1

VECF2

C-E diode reverse recovery time

trr

Notes: 3. Pulse test

Typ

1.4

1.6

1260

1.6

1.8

140

Preliminary

Max

100

Â±1

1.82

2.1

Unit

ïA

(Tj = 25Â°C)

Test Conditions

VCE = 600V, VGE = 0

VGE = Â±30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 20 A, VGE = 15 V Note3

IC = 40 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

IC = 20 A, Resistive Load

VCC = 300 V

VGE = 15 V

Rg = 5 ï Note3

IF = 20 A Note3

IF = 40 A Note3

IF = 20 A

diF/dt = 100 A/ïs

R07DS0199EJ0200 Rev.2.00

Dec 01, 2010

Page 2 of 7

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