RJF0604DPD_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – 60V, 5A Silicon N Channel Thermal FET

RJF0604DPD
Static Drain to Source on State Resistance
vs. Temperature
120
Pulse Test
100
I_D = 2 A, 0.5 A, 1 A
80
60 ^VGS ^{= 4 V}
40
20
10 V
I_D = 2 A, 0.5 A, 1 A
0
–50 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
10
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
1
0.1
1
10
100
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
V_GS = 5 V
2
0V
1
Pulse Test
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V_SD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
100
V_DS = 10 V
Pulse Test
10
Tc = –40°C
1
150°C
25°C
0.1
0.1
1
10
Drain Current I_D (A)
Switching Characteristics
100
V_GS = 10 V, V_DD = 30 V
PW = 300 μs, duty ≤ 1 %
td(off)
10
tf
tr
1 ^td(on)
0.1
0.1 0.2
0.5 1 2
5
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Coss
30
V_GS = 0
f = 1 MHz
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
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