RJF0604DPD_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – 60V, 5A Silicon N Channel Thermal FET

RJF0604DPD
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
9V
8V
7V
5V
10
Pulse Test
4V
V_GS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
300
Pulse Test
200
I_D = 2.5 A
100
1.0 A
0
0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS0713EJ0200 Rev.2.00
Nov 05, 2013
Target Specifications
Maximum Safe Operation Area
100
Thermal shut down
Operation area
10
1
0.1
0.01
DC Operation
(Tc = 25°C)
PW = 10 ms
Operation in
this area is
limited by R_{DS (on)}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 10 V
Pulse Test
4
3
2
150°C
1
25°C
Tc = –40°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
V_GS = 4 V
50
10 V
20
10
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
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