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RJE0607JSP Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching | |||
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RJE0607JSP
Static Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
ID = â1 A
â0.2 A, â0.5 A
300
200 VGS = â6 V
100
ID = â0.2 A, â0.5 A, â1 A
â10 V
0
â50 â25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Switching Characteristics
10
tr
td(on)
1
td(off)
tf
VGS = â10 V, VDD = â30 V
PW = 300 μs, duty ⤠1 %
0.1
â0.1
â1
â10
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
â2.0
â10 V
â1.5
Pulse Test
â1.0
â0.5
â5 V
VGS = 0 V
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
â0.1
di / dt = 50 A /μs
VGS = 0, Ta = 25°C
â1
â10
Reverse Drain Current IDR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Coss
100
10
â0 â10 â20 â30 â40 â50 â60
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
â16
â14
â12
â10
VDD = â16 V
â8
â6
â4
â2
0
1
10
100
Shutdown Time of Load-Short Test Pw (ms)
REJ03G1876-0100 Rev.1.00
Apr 01, 2010
Page 4 of 7
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