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RJE0607JSP Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching | |||
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RJE0607JSP
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 (FR4 40 x 40 x 1.6 mm), (PW ⤠10s)
2.0
1.0
2 D1rivDerirvOerpOepraetriaotnion
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
â1.5
â4.5 V
â5 V
â6 V
â8 V
â1.0
â10 V
Pulse Test
â4 V
â0.5
â3.5 V
VGS = 0 V
0
â2 â4 â6 â8 â10
Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
â1000
Pulse Test
â800
â600
â400
â200
â1 A
0 ID = â0.5 A
â2
â4
â6
â8
â10
Gate to Source Voltage VGS (V)
REJ03G1876-0100 Rev.1.00
Apr 01, 2010
Preliminary
Maximum Safe Operation Area
â10 Ta = 25°C
1 shot Pulse
1 Driver Operation
Thermal shut down operation area
â1
â0.1
Operation
in this area
is limited RDS(on)
â0.01
â0.01
â0.1
â1
â10 â100
Drain to Source Voltage VDS (V)
Note 6:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
â2.0
VDS = â10 V
Pulse Test
â1.5
â1.0
Tc = 75°C
25°C
â0.5
â40°C
0
0
â2 â4 â6 â8 â10
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
VGS = â6 V
100
â10 V
10
â0.1
â1
â10
Drain Current ID (A)
Page 3 of 7
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