R1LP0408D_17 Datasheet, PDF (4/13 Pages) Renesas Technology Corp – 4Mb Advanced LPSRAM

R1LP0408D Series
Operation Table
WE#
CS#
OE#
Mode
×
H
×
Not selected
H
L
H
Output disable
H
L
L
Read
L
L
H
Write
L
L
L
Write
Note 1. H: VIH L:VIL ×: VIH or VIL
Vcc current
ISB, ISB1
Icc
Icc
Icc
Icc
I/O0 to I/O7
High-Z
High-Z
Dout
Din
Din
Ref. cycle
─
─
Read cycle
Write cycle (1)
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
unit
Power supply voltage relative to Vss
Vcc
-0.5 to +7.0
V
Terminal voltage on any pin relative to Vss
VT
-0.5^*1 to Vcc+0.3^*2
V
Power dissipation
PT
0.7
W
Operation temperature
Topr
-40 to +85
°C
Storage temperature range
Tstg
-65 to 150
°C
Storage temperature range under bias
Tbias
-40 to +85
°C
Note 1. -3.0V for pulse ≤ 30ns (full width at half maximum)
2. Maximum voltage is +7.0V.
R10DS0274EJ0100 Rev.1.00
2017.1.27
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