PD16805_15 Datasheet, PDF (4/18 Pages) Renesas Technology Corp – MONOLITHIC H BRIDGE DRIVER CIRCUIT

µPD16805
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C, Glass epoxy substrate 100 mm × 100 mm × 1 mm, 15% copper foil)
Parameter
Supply voltage
Symbol
VDD
VM
Conditions
Control section
Motor section
Rating
Unit
−0.5 to +6.5/+8.0^Note
V
−0.5 to +6.5/+8.0^Note
V
VG pin applied voltage
Input voltage
H bridge drive current
H bridge drive current
Power consumption
VG
VIN
ID(DC)
ID(pulse)
PT
DC
PW ≤ 200 ms (single pulse)
GS
MA-6A5
15
−0.5 to VDD +0.5
1.0
4.2
1.0
0.7
V
V
A
A/ch
W
W
Peak junction temperature
Storage temperature
TCH(MAX)
Tstg
150
°C
−55 to +150
°C
Note When the charge pump is used/when VG power-source supply from the exterior.
RECOMMENDED OPERATING CONDITIONS
(TA = 25°C, Glass epoxy substrate 100 mm × 100 mm × 1 mm, 15% copper foil)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply voltage
During normal operation
3.0
VDD
All input pins are low
2.5
V
6.0/7.5^{Note 2}
Charge pump capacitance
VG pin applied voltage^{Note 1}
Operating temperature
VM
C1 to C3
VG
TA
At the time of external input
Ambient temperature
0.5
V
0.01
µF
11
14
V
−30
60
°C
Notes 1. When voltage is impressed to VG terminal from the exterior
2. When the charge pump is used/when VG power-source supply from the exterior.
ELECTRICAL SPECIFICATIONS
(Unless otherwise specified, VDD = recommended operating condition, VM = 0.5 to 6.0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VDD pin current
VDD = 5 V,
IDD1
TA = Recommended conditions
Control pins at high level
VDD = 5 V,
IDD2
TA = Recommended conditions
Control pins at low level
0.6
2.0
mA
0.3
10
µA
VM pin current
IM1
TA = Reommended conditions
Control pins at low level
IM2
Control pins at low level
0.1
10
µA
1.0
µA
H bridge ON resistance
ID = 1 A, VDD = VM = 5 V
RON
C1 = C2 = C3 = 0.01 µF
sum of the upper and lower
sides MOSFET
0.4
0.6
Ω
High-level input voltage
VIH
TA = Recommended conditions 0.6 × VDD
V
Low-level input voltage
VIL
TA = Recommended conditions
0.2 × VDD
V
Charge pump circuit turn-ON time tONG
H bridge output circuit turn-ON time tONH
H bridge output circuit turn-OFF time tOFFH
VDD = VM = 5 V,
TA = Recommended conditions
C1 = C2 = C3 = 0.01 µF
ID = 1 A
0.5
1.0
ms
10
µs
5.0
µs
35
50
65
kΩ
Control pin input pull-down resistor RIND
TA = Recommended conditions
25
75
kΩ
2
Data Sheet S11032EJ4V0DS