PA2454_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

μ PA2454
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 24.0 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12.0 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10.0 V, ID = 1.0 mA
VDS = 10.0 V, ID = 4.0 A
VGS = 4.5 V, ID = 4.0 A
RDS(on)2 VGS = 4.0 V, ID = 4.0 A
RDS(on)3 VGS = 3.1 V, ID = 4.0 A
RDS(on)4 VGS = 2.5 V, ID = 4.0 A
Input Capacitance
Ciss
VDS = 10.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 20.0 V
Rise Time
tr
ID = 4.0 A
Turn-off Delay Time
td(off)
VGS = 4.0 V
Fall Time
tf
RG = 6.0 Ω
Total Gate Charge
QG
VDD = 20.0 V
Gate to Source Charge
QGS
VGS = 4.0 V
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = 8.0 A
IF = 8.0 A, VGS = 0 V
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
MIN.
0.5
5.0
6.0
6.3
7.0
8.0
TYP.
1.0
8.0
8.3
9.5
11.5
1000
200
110
4.6
11.6
14.5
18.5
11.5
2.5
4.5
0.81
MAX.
1.0
±10.0
1.5
10.0
10.5
13.0
15.5
UNIT
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
μs
μs
μs
μs
nC
nC
nC
V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G20063EJ1V1DS