PA2454_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2454
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The μ PA2454 is a switching device which can be driven directly by
a 2.5 V power source.
This μ PA2454 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
1
6
2
5
3
4
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 10.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 10.5 mΩ TYP. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 13.0 mΩ TYP. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 15.5 mΩ TYP. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
24.0
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12.0
V
Drain Current (DC) ^Note1
ID(DC)
±15.0
A
Drain Current (pulse) ^Note2
ID(pulse)
±100
A
Total Power Dissipation (2 units) ^Note1
PT1
2.5
W
Total Power Dissipation (2 units) ^Note3
PT2
0.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
4.4±0.1
5.0±0.1
7
(0.9)
(0.15)
(3.05)
Each lead has same dimensions
1,2: Source 1
5,6: Source 2
3: Gate 1
4: Gate 2
7: Drain
(0.50)
Notes 1. Mounted on ceramic substrate of 50 cm² x 1.1 mm
2. PW ≤ 10 μs, Duty Cycle ≤ 1%
3. Mounted on FR-4 board of 50 cm² x 1.6 mm
EQUIVALENT CIRCUIT
Drain1
Drain2
Remark The diode connected between the gate and source of the transistor serves as a
protector against ESD. When this device actually used, an additional protection
circuit is externally required if a voltage exceeding the rated voltage may be
applied to this device.
ORDERING INFORMATION
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
PART NUMBER
μ PA2454TL-E1-A^Note
μ PA2454TL-E2-A^Note
LEAD PLATING
Sn-Bi
PACKING
Reel
3000 p/reel
PACKAGE
6PIN HWSON (4521)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the
latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
Document No. G20063EJ1V1DS00 (1st edition)
Date Published March 2010 NS
Printed in Japan
2010