NP90N055MUK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N055MUK, NP90N055NUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
350
300
250
200
150
100
50
0
0
V_GS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
–100 –50 0
V_DS = V_GS
I_D = 250 μA
50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
7
6
5
4
3
2
1
V_GS = 10 V
Pulsed
0
1
10
100
1000
I_D - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = –55°C
25°C
85°C
150°C
1
175°C
0.1
0.01
0.001
0
V_DS = 10 V
Pulsed
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
100
TA = –55°C
25°C
85°C
150°C
175°C
10
1
0.1
V_DS = 5 V
Pulsed
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
7
6
5
4
3
2
1
I_D = 45 A
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
R07DS0602EJ0100 Rev.1.00
Jan 11, 2012
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