NP90N055MUK_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP90N055MUK, NP90N055NUK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
200
180
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
I_D(Pulse) = 360 A
RDS(ON) Limited
100 ^{(VGS=10 V)}
PW _{= 100 μs}
I_D(DC) = 90 A
10 ^{Power Dissipation Limited}
Secondary Breakdown Limited
1
T_C = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
R_th(ch-A) = 83.3°C/W
10
1
R_th(ch-C) = 0.85°C/W
0.1
0.01
0.1 m
1m
10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
R07DS0602EJ0100 Rev.1.00
Jan 11, 2012
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