NP89N06PDK Datasheet, PDF (4/9 Pages) Renesas Technology Corp – 60 V – 90 A – N-channel Power MOS FET

NP89N06PDK
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0
50
100
150
200
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)=360A
100
ID(DC)=90A
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
120
80
40
0
0
50
100
150
200
T_C - Case Temperature - °C
1
Power Dissipation Limited
0.1
T_C=25℃
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain to Source Voltage – V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 125°C/W
10
Rth(ch-C) = 1.02°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1343EJ0100 Rev.1.00
Jun 01, 2016
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