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| NP89N06PDK Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 60 V – 90 A – N-channel Power MOS FET | |||
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NP89N06PDK
60 V â 90 A â N-channel Power MOS FET
Application: Automotive
Data Sheet
R07DS1343EJ0100
Rev.1.00
Jun 01, 2016
Description
NP89N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
⢠Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body
Diode
Source
TO-263(MP-25ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP89N06PDK-E1-AY *1
NP89N06PDK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
Package
TO-263(MP-25ZP)
R07DS1343EJ0100 Rev.1.00
Jun 01, 2016
Page 1 of 7
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