NP80N04EHE_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) ^Note1
Drain Current (Pulse) ^Note2
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
VDSS
40
V
VGSS
±20
V
ID(DC)
±80
A
ID(pulse)
±280
A
PT
1.8
W
PT
120
W
Tch
175
°C
Tstg
−55 to +175
°C
IAS
52/31/13
A
EAS
2.7/96/169
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
1.25
83.3
°C/W
°C/W
2
Data Sheet D14239EJ7V0DS