NP74N04YUG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP74N04YUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
200
150
100
50
VGS = 10 V
Pulsed
0
0
0.5
1
1.5
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
VDS = VGS
3.5
ID = 250 μA
3
2.5
2
1.5
1
0.5
0
-100
0
100
200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
15
VGS = 10 V
Pulsed
10
5
0
0.1
1
10
100
I_D - Drain Current - A
1000
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = −55°C
25°C
75°C
1
125°C
175°C
0.1
0.01
0.001
VDS = 10 V
Pulsed
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
100
TA = −55°C
25°C
75°C
125°C
175°C
10
1
0.1
VDS = 5 V
Pulsed
1
10
100
1000
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
10
ID = 75 A
37.5 A
15 A
5
Pulsed
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
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