NP74N04YUG_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP74N04YUG
Typical Characteristics (T_A = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R
DS(on)
(V^GS
Lim^{1 i}
= ¹¹⁰
t ^ed
V)
ID(pulse)
Power Dissipation Limited
PW
= _{1100 μs}
Chapter Title
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
T_C - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
V_DS - Drain to Source Voltage - V
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A): 150°C/W
10
Rth(ch-C): 1.25°C/W
1
0.1
Single pulse
Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
0.01
100 μ
1m
10 m 100 m
1
10
100
PW - Pulse Width - s
1000
R07DS0017EJ0100 Rev.1.00
Jul 01, 2010
Page 3 of 6