NP50P04SLG_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP50P04SLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-200
-180
−5.0 V
-160 _{VGS = −10 V}
-140
-120
-100
−4.5 V
-80
-60
-40
-20
Pulsed
-0
0
-1
-2
-3
-4
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4 ^Pulsed
VDS = VGS
-0.2 _{ID = −250 μA}
0
-75 -25
25
75 125 175
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
18
16
14
12
10
8
6
4
2
0
-1
−4.5 V
−5.0 V
VGS = −10 V
Pulsed
-10
-100
-1000
I_D - Drain Current - A
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10 V
Pulsed
-10
-1
100°C
-0.1 125°C
-0.01
-0.001
150°C
175°C
-0.0001
0 -0.5 -1
Tch = −55°C
−25°C
25°C
75°C
-1.5 -2 -2.5 -3 -3.5
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
10 ^Pulsed
Tch = −55°C
−25°C
1
25°C
0.1 _75°C
0.01
0.001
100°C
125°C
150°C
175°C
0.0001
0.0001 0.001 0.01
0.1
1
10
100
I_D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
35
30
25
20
15
10
5 ^{−10 A}
0
0
-5
−25 A
ID = −50 A
Pulsed
-10 -15 -20 -25
V_GS - Gate to Source Voltage - V
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