NP160N04TUK_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP160N04TUK
700
600
500
400
300
200
100
0
0.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.2 0.4 0.6 0.8 1.0
V_DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
4
VDS = VGS
ID = 250 μA
3
2
1
0
-100 -50 0 50 100 150 200
T_ch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
1
VGS = 10 V
Pulsed
0
1
10
100
1000
I_D - Drain Current - A
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
TA = −55°C
25°C
80°C
150°C
175°C
0.1
0.01
VDS = 10 V
Pulsed
0.001
0
1
2
3
4
5
6
V_GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
1000
100
TA = −55°C
25°C
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
1
10
100
I_D - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
ID = 80 A
Pulsed
3
2
1
0
0
5
10
15
20
V_GS - Gate to Source Voltage - V
Page 4 of 6