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| NP160N04TUK_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP160N04TUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0543EJ0100
Rev.1.00
Sep 23, 2011
Description
The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A )
⢠Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V )
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP160N04TUK-E1-AY â1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP160N04TUK-E2-AY â1
Taping (E2 type)
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin (MP-25ZT)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current â2
Repetitive Avalanche Energy â2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±160
±640
250
1.8
175
â55 to +175
56
313
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. RG = 25 Ω, VGS = 20 à 0 V
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Page 1 of 6
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