HAT2268C Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2268C
Static Drain to Source on State Resistance
vs. Temperature
100
80
60
1, 2, 4 A
4.5 V
40
I_D = 1, 2, 4 A
20
V_GS = 10 V
Pulse Test
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
80
16
I_D = 4 A
60
40
V_DD
V_DD = 30 V
20 V
10 V
12
V_GS
8
20
4
V_DD = 30 V
20 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
4.5 V
8
10 V
V_GS = 0 V
4
Pulse Test
0
0.4 0.8 1.2 ^1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
30
25°C
10
3
75°C
1
0.3
0.1
0.1 0.3 1 ³
V_DS = 10 V
Pulse Test
10 30 100
Drain Current I_D (A)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
30
V_GS = 0
f = 1 MHz
10
0 5 10 15 20 25 ³⁰
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
tr
100
tf
10
tr
1
0.1 0.3
td(off)
td(on)
tf
V_GS = 10 V, V_DD = 10 V
R_G = 4.5 Ω, R_L = 5 Ω
1 3 10 30 100
Drain Current I_D (A)
Rev.2.00 Feb 28, 2006 page 4 of 6