HAT2268C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2268C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage
V_(BR)DSS
30
Gate to Source breakdown voltage
V_(BR)GSS
+20
–10
Gate to Source leak current
I_GSS
—
Drain to Source leak current
I_DSS
—
Gate to Source cutoff voltage
V_GS(off)
1.0
Drain to Source on state resistance
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|yfs|
5.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn - on delay time
td(on)
—
Rise time
tr
—
Turn - off delay time
td(off)
—
Fall time
tf
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Body - Drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
Typ
—
—
—
—
27
37
8.5
440
110
45
15
50
45
7
8
1.5
1.3
0.85
Max
—
±10
1
2.0
34
54
—
—
—
—
—
—
—
—
—
—
—
1.15
(Ta = 25°C)
Unit
Test conditions
V
I_D = 10 mA, V_GS = 0
I_G = ±10 µA, V_DS = 0
µA V_GS = +16 / -8 V, V_DS = 0
µA V_DS = 30 V, V_GS = 0
V
V_DS = 10 V, I_D = 1 mA
mΩ I_D = 2 A, V_GS = 10 V^Note3
mΩ I_D = 2 A, V_GS = 4.5 V^Note3
S
I_D = 2 A, V_DS = 10 V ^Note3
pF V_DS = 10 V, V_GS = 0,
pF ^{f = 1 MHz}
pF
ns I_D = 2 A, V_GS = 10 V,
ns ^VDD ^{= 10 V, R}L ^{= 5 Ω ,}
ns ^{Rg = 4.7 Ω}
ns
nC V_DD = 10 V, V_GS = 10 V
nC ^ID ^{= 4 A}
nC
V
I_F = 4 A, V_GS = 0 ^Note3
Rev.2.00 Feb 28, 2006 page 2 of 6