HAT2206C_15 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2206C
Static Drain to Source on State Resistance
vs. Temperature
200
0.5 A
1A
2A
160
120 _{1.8 V}
2.5 ^V
80
40 _{VGS = 4.5 V}
2A
1A
0.5 A
I_D = 0.5, 1, 2 A
0
Pulse Test
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
16
8
I_D = 2 A
12
V_DD = 12 V
6
10 V
5V
8
4
4
2
V_DD = 12 V
10 V
5V
0
0
1
2
3
4
5
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
10
8 ^{4.5 V}
6
2.5V
4
V_GS = 0, –5 V
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
1000
300
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
100
Coss
30
Crss
10
3
1
0 2 4 6 8 10 12
Drain to Source Voltage V_DS (V)
1000
100
Switching Characteristics
V_GS = 4.5 V, V_DD = 10 V
Rg = 4.7 Ω
td(off)
tr
10
td(on)
tf
1
0.01 0.03 0.1 0.3 1 3 10
Drain Current I_D (A)
R07DS1182EJ0600 Rev.6.00
Mar 19, 2014
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