HAT2206C_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2206C
Electrical Characteristics
Item
Symbol Min
Drain to Source breakdown voltage V_(BR)DSS
12
Gate to Source breakdown voltage V_(BR)GSS
±8
Gate to Source leakage current
I_GSS
—
Drain to Source leakage current
I_DSS
—
Gate to Source cutoff voltage
V_GS(th)
0.3
Drain to Source on state resistance R_DS(on)
—
R_DS(on)
—
R_DS(on)
—
Forward transfer admittance
|y_fs|
3.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Turn - on delay time
t_d(on)
—
Rise time
t_r
—
Turn - off delay time
t_d(off)
—
Fall time
t_f
—
Body - Drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
Typ Max
—
—
—
—
—
±10
—
1
—
1.2
65
85
81
114
113
170
5.5
—
260
—
46
—
22
—
3.5
—
0.7
—
0.7
—
4
—
7
—
43
—
3
—
0.8
1.1
Unit
V
V
μA
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±10 μA, V_DS = 0
V_GS = ±6.4 V, V_DS = 0
V_DS = 10 V, V_GS = 0
VDS = 10 V, ID = 1mA
I_D = 1 A, V_GS = 4.5 V ^Note3
I_D = 1 A, V_GS = 2.5 V ^Note3
I_D = 1 A, V_GS = 1.8 V ^Note3
I_D = 1 A, V_GS = 10 V ^Note3
V_GS = 0, f = 1 MHz,
V_DS = 10 V
V_GS = 4.5 V, V_DS = 10 V,
I_D =2 A
V_GS = 4.5V, I_D = 1 A,
V_DD = 10 V, R_L = 10 Ω,
R_g = 4.7 Ω
I_F =2 A, V_GS = 0 ^Note3
R07DS1182EJ0600 Rev.6.00
Mar 19, 2014
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