HAT2203C_11 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2203C
Static Drain to Source on State Resistance
vs. Temperature
200
160
0.5 A
1A
I_D = 2 A
120
V_GS = 2.5 V
80
0.5 A
2A
4.5 V
40
1A
0
Pulse Test
−25 0 25 50 75 100 125 150
Case Temperature Tc ( °C)
Dynamic Input Characteristics
40
8
ID = 2 A
VGS
VDD = 5 V
30
10 V
6
20 V
V_DD
20
4
10
2
VDD = 20 V
10 V
5V
0
0
0.8 1.6 2.4 3.2 4.0
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
10
8 ^5V
6
VGS = 0 , -5 V
4
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Forward Transfer Admittance vs.
Drain Current
10
3
Tc = −25°C
1
25°C
75°C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3
V_DS = 10 V
Pulse Test
1 3 10
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
300
Ciss
100
Coss
30
Crss
10
3
1
0 4 8 12 16 20 24
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
100
td(off)
10
td(on)
tr
tf
1
0.1 0.3 1 3
10 30 100
Drain Current I_D (A)
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
Page 4 of 6