HAT2203C_11 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2203C
Silicon N Channel MOS FET
Power Switching
Features
 Low on-resistance
R_DS(on) = 69 m typ.(at V_GS = 4.5 V)
 Low drive current
 High density mounting
 2.5 V gate drive device
Preliminary Datasheet
R07DS0323EJ0500
(Previous: REJ03G0447-0400)
Rev.5.00
Mar 28, 2011
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index band
6 ⁵⁴
3
2
1
234 5
DDD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
20
±12
2
8
2
830
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
C
C
R07DS0323EJ0500 Rev.5.00
Mar 28, 2011
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