HAT2183WP Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2183WP
Static Drain to Source on State Resistance
vs. Temperature
0.20 _{VGS = 10 V}
Pulse Test
0.16
I_D = 20 A
10 A
0.12
5A
0.08
0.04
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di / dt = 100 A / µs
2
V_GS = 0, Ta = 25°C
1
1 3 10 30 100 300 1000
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
240
I_D = 20 A
V_DD = 30 V
180
60 V
120 V
16
V_GS
12
120 ^VDS
8
60
V_DD = 120 V
4
60 V
30 V
0
0
8
16 24 32
40
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = −25°C
10
3
75°C
25°C
1
0.3
V_DS = 10 V
0.1
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
300
100
Coss
30
Crss
10
3
1
0
50
100
150
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 10 V, V_DD = 75 V
tf _{PW = 5 µs, duty ≤ 1 %}
tr
R_G = 10 Ω
100
td(off)
td(on)
tf
10
tr
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Rev.5.00, Oct 21, 2005, page 4 of 6