HAT2183WP Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2183WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
Pulse Test
7V
6V
16
12
5.7 V
5.5 V
8
5.3 V
4
V_GS = 5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
4
3
2
I_D = 20 A
1
10 A
5A
0
4
8 12 16 20
Gate to Source Voltage V_GS (V)
Rev.5.00, Oct 21, 2005, page 3 of 6
Maximum Safe Operation Area
100
30
10
1
ms100
10
µ_s
µ_s
3
1
DC
(T_{c =}
O25p_{°eCra)tion}
0.3
Operation in this
0.1 area is limited by
0.03 ^RDS(on)
0.01
PW = 10 ms
(1shot)
0.003 _{Ta = 25°C}
0.001
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4 _{Tc = –75°C}
25°C
−25°C
0
246
8 10
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
1
V_GS = 10 V
0.5
0.2
0.1
0.05
0.02
0.01
1
Pulse Test
3 10 30 100 300 1000
Drain Current I_D (A)