HAT2172N Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2172N
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
15
I_D = 20 A ^{5 A, 10 A}
10
VGS = 7 V
5
5 A, 10 A, 20 A
10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 30 A
40
30
V_DS
20
V_DD = 25 V
10 V
5V
16
V_GS
12
8
10
V_DD = 25 V
4
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
75°C
10
25°C
3
1
0.3
V_DS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30 _{VGS = 0}
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
30
10
3
1
0.1 0.3
tr
td(off)
td(on)
tf
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
REJ03G1683-0100 Rev.1.00 May 28, 2008
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